Rajkiran Tholapi

• High through put delivery of III/V material stacks in 2D and 1D geometries for topological qubit platform
• Execution and coordination of growth-fab-measurement feedback loops for growth stack optimization
• Responsible for regular preventive maintenance of UHV cluster and installation of new deposition tools.
• Authored detailed process specifications for development of deposition and metrology hardware components.
• Researched complex technical issues and provided resolutions.

• Development of selective area epitaxy processes for different III-V nanowire material systems for achieving topological qubit based quantum computing at Microsoft quantum Lab
• Developed a virtual substrate platform to nullify defects generation in selectively grown nanowires by engineering a lattice matched buffer and optimizing the substrate preparation processes.
• Demonstrated leadership skills in managing projects from concept to completion.

• Responsibilities:
• Investigated the influence of intrinsic strain and device dimensions on the phase change material (PCM) crystallization transition dynamics in collaboration with CEA-LETI
• Applied a combination of in-situ X-ray diffraction and electrical characterization during thermal cycling of ultra-thin layers and confined nanostructures of PCM’s to correlate the resistance drift in the amorphous phase to the structural changes.

Enhancement of FM-SC interfaces sharpness and optimization of InxAl1−xAs metamorphic buffer design for achieving high electron mobilities in InAs based HEMT structures.

Integrated a specially designed portable atomic force microscope on 2 different synchrotron facilities for studying the effect of extrinsic strain on electrical response in FM-SC devices.

Improved the oxide/tunnel barrier film quality and performance by chamber- hardware modifications and also responsible for metal/oxide/semiconductor.

Development of Zinc and Cobalt Antimonide materials from plasma and solid state methods and their electrical characterization for thermoelectric applications.